MMBT4401 (100-300)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR (NPN) SOT–23 FEATURES z Switching Transistor MARKING:2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 6 V Collector cut-off current ICEO VCE=30V, IB=0 100 nA Collector cut-off current ICBO VCB= 50V, IE=0 100 nA Emitter cut-off current IEBO VEB=5V, IC=0 100 nA DC current gain hFE VCE=1V, IC=150mA 100 300 Collector-emitter saturation voltage VCE(sat) IC=150mA, IB=15mA 0.4 V Collector-emitter saturation voltage VBE(sat) IC=150mA, IB=15mA 0.95 V Transition frequency fT VCE=10V,IC=20mA, f=100MHz Delay time td VCC=30V, VBE(off)=-2V IC=150mA, 15 ns Rise time tr IB1=15mA 20 ns Storage time ts 225 ns Fall time tf 30 ns VCC=30V, IC=150mA, IB1= IB2=15mA 250 MHz C,Aug,2012 Typical Characteristics MMBT4401 Static Characteristic DC CURRENT GAIN IC 0.8mA 0.7mA 0.6mA 0.5mA 100 0.4mA 0.3mA 50 IC Ta=100℃ 0.9mA 150 —— COMMON EMITTER VCE= 1V 1mA hFE (mA) COMMON EMITTER Ta=25℃ 200 COLLECTOR CURRENT hFE 1000 250 Ta=25℃ 100 0.2mA IB=0.1mA 0 10 0 1 2 3 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 4 1 IC VCEsat 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) —— IC 600 100 (mA) IC β=10 β=10 Ta=25℃ 600 Ta=100 ℃ 400 200 0 0.1 1 10 100 COLLECTOR CURREMT IC —— IC Ta=100 ℃ 100 Ta=25℃ 10 0.5 0.1 600 1 10 COLLECTOR CURREMT (mA) VBE fT 500 600 (mA) IC Ta=25℃ TRANSITION FREQUENCY 10 T =2 5℃ a T =1 00℃ a COLLECTOR CURRENT IC fT 100 —— 600 100 IC COMMON EMITTER VCE=10V (MHz) COMMON EMITTER VCE=1V (mA) 10 COLLECTOR CURRENT VCE (V) 1 0.1 0 200 400 600 800 1000 100 10 1200 10 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ (pF) Cib C CAPACITANCE PC 400 f=1MHz IE=0/IC=0 10 Cob 1 0.1 20 30 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) —— IC 40 (mA) Ta 300 200 100 0 1 REVERSE VOLTAGE 10 V (V) 30 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) C,Aug,2012